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Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

Influence of thermal stress on the relative permittivity of the A1GaN barrier layer in an A1GaN/GaN heterostructure Schottky contacts
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摘要 Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated.Some samples were thermally treated in a furnace with N 2 ambience at 600 C for different times (0.5 h,4.5 h,10.5 h,18 h,33 h,48 h,and 72 h),the others were thermally treated for 0.5 h at different temperatures (500℃,600℃,700℃,and 800℃).With the measured current-voltage (I-V) and capacitance-voltage (C-V) curves and by self-consistently solving Schrodinger’s and Poisson’s equations,we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer.The relative permittivity was in proportion to the strain of the AlGaN barrier layer.The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600℃ in the current study),and then the relative permittivity was almost a constant with the increased thermal stress time.When the sample was treated at 800℃ for 0.5 h,the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms.Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect,the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices. Ni Schottky contacts on A1GaN/CaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N2 ambience at 600 ~C for different times (0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h), the others were thermally treated for 0.5 h at different temperatures (500 ~C, 600 ~C, 700 ~C, and 800 ~C). With the measured current-voltage (I-V) and capacitance-voltage (C V) curves and by self-consistently solving Schrodinger's and Poisson's equations, we found that the relative permittivity of the A1GaN barrier layer was related to the piezoelectric and the spontaneous polarization of the A1GaN barrier layer. The relative permittivity was in proportion to the strain of the A1GaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the A1GaN barrier totally relaxed (after 18 h at 600 ~C in the current study), and then the relative permittivity was almost a constant with the increased thermal strcss time. When the sample was treated at 800 ~C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the A1GaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of A1GaN/GaN heterostructure devices.
作者 吕元杰 林兆军 张宇 孟令国 曹芝芳 栾崇彪 陈弘 王占国 Lu Yuan-Jie Lin Zhao-Jun Zhang Yu Meng Ling-Guo Cao Zhi-Fang Luan Chong-Biao Chen Hong and Wang Zhan-Guo a) School of Physics, Shandong University, Jinan 250100, China b) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Sciences, Beijing 100190, China c) Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
出处 《中国物理:英文版》 SCIE EI CAS CSCD 2011年第9期 350-354,共5页 Chinese Physics
基金 Project supported by the National Natural Science Foundation of China (Grant No. 10774090) and the National Basic Research Program of China (Grant No. 2007CB936602).
关键词 相对介电常数 异质结器件 肖特基接触 热应力 屏障 逆压电效应 时间常数 泊松方程 A1GaN/GaN heterostructures, relative permittivity of A1GaN barrier layer, conversepiezoelectric effect
作者简介 Corresponding author. E-mail: linzj@sdu.edu.cn
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