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EEPROM和SRAM瞬时剂量率效应比较 被引量:1

Comparison of Transient Radiation Effect Between EEPROM and SRAM
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摘要 对一种256 kb EEPROM电路AT28C256和一种256 kb SRAM电路HM62256开展了"强光一号"瞬时剂量率效应实验,测量了存储器的闩锁效应、翻转效应等。HM62256的翻转阈值为9.0×106 Gy(Si)/s,闩锁阈值高于5.4×107 Gy(Si)/s。AT28C256的闩锁阈值为2×107 Gy(Si)/s,存储单元翻转阈值高于3.0×108 Gy(Si)/s。对于SRAM,其翻转阈值远低于闩锁阈值;而对于EEPROM,在瞬时辐照下,闩锁阈值远低于存储单元的翻转阈值。基于两种存储器的数据存储原理,分析了SRAM和EEPROM瞬时剂量率效应差异的原因。 AT28C256 is a kind of floating gate electrically erasable programmable read only memory and HM62256 is a kind of static random memory. Transient dose rate effects are studied for AT28C256 and HM62256 using Qiangguang-1 accelerator. The AT28C256 was found to be susceptible to dose rate latchup and average latchup level is 1.9 × 107 Gy(Si)/s Following 3.0 × 108 Gy(Si)/s, memory contents were retained and memory can erasure and program exactly in AT28C256. HM62256 was found to be susceptible to upset and average upset level is 0.9 × 107 Gy(Si)/s. Following 5.4 × 107 Gy(Si)/s, no latchup was happened in HM62256. Differences in memory structures and mechanism to store data are the causes for difference of transient radiation effects between EEPROMs and SRAMs.
作者 王桂珍 林东生 齐超 白小燕 杨善超 李瑞宾 马强 金晓明 刘岩 WANG Guizhen, LIN Dongsheng, QI Chao, BAI Xiaoyan, YANG Shanchao, LI Ruibin, MA Qiang, JIN Xiaoming, LIU Yan (State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi 'an 710024, P R. China)
出处 《微电子学》 CAS CSCD 北大核心 2014年第4期510-514,共5页 Microelectronics
关键词 浮栅器件 EEPROM SRAM 剂量率 闩锁阈值 翻转阈值 Floating gate device EEPROM SRAM Dose rate Latchup level Upset level
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