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Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling

Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling
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摘要 In this paper, a closed-form current model for bulk tunneling field-effect transistor(TFET) is put forward. Based on the operation mechanism, the channel surface potential φsf which involves the impact of both the gate and the drain voltages is established for the first time. In addition, a new calculation method for the dynamic tunneling width, which is the critical parameter for the TFET modeling, is derived from the surface potential. The surface-potential-based current model is established which is in a good agreement with TCAD simulation results. In this paper, a closed-form current model for bulk tunneling field-effect transistor(TFET) is put forward. Based on the operation mechanism, the channel surface potential φsf which involves the impact of both the gate and the drain voltages is established for the first time. In addition, a new calculation method for the dynamic tunneling width, which is the critical parameter for the TFET modeling, is derived from the surface potential. The surface-potential-based current model is established which is in a good agreement with TCAD simulation results.
作者 WANG Chao WU ChunLei WANG JiaXin HUANG QianQian HUANG Ru Chao Wang (1) <br> ChunLei Wu (1) <br> JiaXin Wang (1) <br> QianQian Huang (1) <br> Ru Huang (1) <br><br>1. Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing, 100871, China <br>
出处 《中国科学:信息科学(英文版)》 SCIE EI CSCD 2015年第2期170-177,共8页 SCIENCE CHINA Information Sciences
基金 supported by Natural Science Foundation of China(Grant No.60625403) National Basic Research Program of China(973 Program)(Grant No.2011CBA00601) National Science & Technology Major Project 02(Grant No.2009ZX02035-001)
关键词 场效应晶体管 栅极电压 模型 隧穿 表面电位 CAD模拟 电流模式 操作机构 tunneling field-effect transistor,current model,surface potential,drain voltage,tunneling width
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参考文献10

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