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Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering

Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering
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摘要 Gallium oxide(Ga_2O_3) films were deposited on singlecrystalline sapphire(0001) substrate by radio frequency(RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga_2O_3 films were investigated in detail using X-ray diffractometer(XRD) and scanning electron microscope(SEM). The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure(β-Ga_2O_3). Structure analysis reveals a clear out-of-plane orientation of β-Ga_2O_3(201) || Al_2O_3(0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared(UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the β-Ga_2O_3 film can be used in the UV optoelectronic devices. Gallium oxide (Ga203) films were deposited on singlecrystalline sapphire (0001) substrate by radio frequency (RF) magnetron sputtering technique in the temperature range of 300--500 ℃. The microstructure of the fl-Ga203 films were investigated in detail using X-ray diffractometer (XRD) and scanning electron microscope (SEM). The results show that the film prepared at 500℃ exhibits the best crystallinity with a monoclinic structure (fl-Ga203). Structure analysis reveals a clear out-of-plane orientation offl-Ga203 (201) II A1203 (0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared (UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the fl-Ga203 film can be used in the UV optoelectronic devices.
作者 Sun, Jian-xu Mi, Wei Zhang, De-shuang Yang, Zheng-chun Zhang, Kai-liang Han, Ye-mei Yuan, Yu-jie Zhao, Jin-shi Li, Bo SUN Jian-xu , MI Wei , ZHANG De-shuang, YANG Zheng-chun , ZHANG Kai-liang , HAN Ye-mei , YUAN Yu-jie , ZHAO Jin-shi , and LI Bo (Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University.of Technology, Tianjin 300384, China 2. Research and Development Center of Silicon Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China)
出处 《光电子快报:英文版》 EI 2017年第4期295-298,共4页 Opto-electronics Letters
基金 This work has been supported by the National Natural Science Foundation of China (Nos.61274113, 61404091, 61505144, 51502203 and 51502204), the Opening Fund of Key Laboratory of Silicon Device Technology in Chinese Academy of Sciences, and the Tianjin Natural Sci- ence Foundation (Nos. 14JCZDJC31500 and 14JCQNJC00800).
关键词 氧化物薄膜 蓝宝石衬底 单斜结构 氧化镓 磁控溅射法 紫外-可见分光光度计 扫描电子显微镜 合成 Energy gap Gallium Infrared devices Magnetron sputtering Optoelectronic devices Sapphire Scanning electron microscopy
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