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高阈值电压低界面态增强型Al2O3/GaN MIS-HEMT

E-Mode Al2O3/GaN MIS-HEMT with High Threshold Voltage and Low-Interface-State
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摘要 采用高温热氧化栅极凹槽刻蚀工艺并结合高温氮气氛围退火技术,制备出了高阈值电压的硅基GaN增强型Al2O3/GaN金属-绝缘体-半导体高电子迁移率晶体管(MIS-HEMT)。采用高温热氧化栅极凹槽刻蚀工艺刻蚀AlGaN层,并在AlGaN/GaN界面处自动终止刻蚀,可有效控制刻蚀的精度并降低栅槽表面的粗糙度。同时,利用高温氮气退火技术能够修复Al2O3/GaN界面的界面陷阱,并降低Al2O3栅介质体缺陷,因此能够减少Al2O3/GaN界面的界面态密度并提升栅极击穿电压。采用这两项技术制备的硅基GaN增强型Al2O3/GaN MIS-HEMT具有较低的栅槽表面平均粗糙度(0.24 nm)、较高的阈值电压(4.9 V)和栅极击穿电压(14.5 V)以及较低的界面态密度(8.49×10^11 cm^-2)。 GaN E-mode Al2O3/GaN metal-insulator-semiconductor high electron mobility transistors(MIS-HEMTs) with high threshold voltage were fabricated on Si substrate by using high-temperature thermal oxidation gate etching process and high-temperature nitrogen atmosphere annealing technique. The AlGaN layer was etched by using the high-temperature thermal oxidation gate etching process, which could be self-terminated at the AlGaN/GaN interface. And it could effectively control the etching accuracy and reduce the surface roughness. Simultaneously, the interface traps of the Al2O3/GaN interface were repaired by using high-temperature nitrogen annealing technology, and the body defects of Al2O3 gate dielectric were reduced. Therefore, the interface state density of the Al2O3/GaN interface was reduced and the gate breakdown voltage was increased. The GaN E-mode Al2O3/GaN MIS-HEMT fabricated on Si substrate by these two technologies has the advantages of lower surface average roughness(0.24 nm), higher threshold vol-tage(4.9 V),gate breakdown voltage(14.5 V) and lower interface state density(8.49×10^11 cm^-2).
作者 李茂林 陈万军 王方洲 施宜军 崔兴涛 信亚杰 刘超 李肇基 张波 Li Maolin;Chen Wanjun;Wang Fangzhou;Shi Yijun;Cui Xingtao;Xin Yajie;Liu Chao;Li Zhaoji;Zhang Bo(School of Electronic Science and Engineering, University of Electronic Science and Technology of China ,Chengdu 610054, China)
出处 《半导体技术》 CAS 北大核心 2019年第4期265-269,290共6页 Semiconductor Technology
基金 四川省青年科技基金资助项目(2017JQ0020) 广东省重大科技专项资助项目(2017B010112003) 中央高校基本科研业务费资助项目(ZYGX2016Z006).
关键词 增强型Al2O3/GaN金属-绝缘体-半导体高电子迁移率晶体管(MIS-HEMT) 阈值电压 界面态 热氧化 退火 E-mode Al2O3/GaN metal-insulator-semiconductor high electron mobility transistor(MIS-HEMT) threshold voltage interface state thermal oxidation annealing
作者简介 李茂林( 1995-),男,四川广元人,硕士研究生,主要研究方向为GaN功率器件与集成电路;通信作者:陈万军( 1978-),男,重庆人,博士,教授,博士生导师,主要从事新型功率半导体器件与集成电路和系统、新型半导体GaN功率器件与集成技术的研究。E-mail: wjchen@uestc.edu.cn.
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