期刊文献+

高功率微波下GaAs PIN限幅器的损伤机理分析 预览

Mechanism Analysis of GaAs PIN Limiter Damaged by High Power Microwave Injection
在线阅读 下载PDF
分享 导出
摘要 GaAs PIN限幅器是置于通信接收前端抗电磁扰动的重要部件。本文对经受高功率微波后GaAs PIN限幅器损伤形貌的观察,结合其损伤机理分析,揭示了PIN二极管易于损伤的位置以及造成界面损伤的机理,对于GaAs PIN限幅器设计和工艺改进具有一定的指导意义。 As an important part, the GaAs PIN limiter which can resist electromagnetism intrusion is placed in the front of communication receive channel. In this article, the damaged morphology of the device is obtained by a variety of failure analysis after high power microwave injection. Based on the failure mechanism analysis, the failure mechanism of interface and location where the damage happens are revealed, which sheds light on the design and improvement of GaAs PIN limiter.
作者 高金环 黄杰 席善斌 GAO Jin-huan;HUANG Jie;XI Shan-bin(The 13th Research Institute,CECT,Shijiazhuang,050051;National semiconductor Device Supervision and Inspection Center, Shijiazhuang 050051)
出处 《环境技术》 2019年第3期6-8,共3页 Environmental Technology
关键词 限幅器 PIN界面 高功率微波 损伤形貌 失效机理 limiter PIN interface high power microwave damaged morphology failure mechanism
作者简介 高金环(1982-),女,硕士研究生,高级工程师,主要从事半导体器件质量与可靠性研究相关方面工作。
  • 相关文献

参考文献2

二级参考文献15

  • 1施敏.半导体器件物理[M].北京:电子工业出版社,1987.. 被引量:9
  • 2刘恩科 朱秉升 罗晋生.半导体物理学[M].北京:国防工业出版社,1994.. 被引量:68
  • 3Tan R J, Ward A L, Garver R V, et al. PIN diode limiter spike leakage, recovery time, and damage[J]. IEEEMTT-S Digest, 1988, (5) : 275-278. 被引量:1
  • 4Tan R J, Ward A L, Kaul R. Spike leakage of thin Si PIN limiters[J]. IEEE Trans on Microwave Theory and Techniques, 1994, 42(10) 1879-1885. 被引量:1
  • 5Tan R J, Ward A L, Kaul R. Transient response of PIN limiter diode[J]. IEEE MTT-S Digest, 1989, (6) : 1303-1306. 被引量:1
  • 6Tan R J, Ward A L, Kaul R. Calculated and measured silicon pin limiter short-pulse damage thresholds[J]. IEEE MTT-S Digest, 1990, (5) :761-764. 被引量:1
  • 7Strollo G M. A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation[J]. IEEE Trans on Power Electronics, 1997, 12(1):12-20. 被引量:1
  • 8Caverly R H, Quinn M J. Time domain modeling of PIN control and limiter diodes[J]. IEEE MTT-S Digest, 1999, (6) :719-722. 被引量:1
  • 9Cory R. PIN-limiter diodes effectively protect receivers [J/OL]. EDN Magazine, 2004, (11):59-64. http,//www, edn. com/article/ CA486567. html? industryid=2281&nid=2433 # Willthatbeclippedorlimited? 被引量:1
  • 10Arora N, Hauser J, Roulston D. Electron and hole mobilities in silicon as a function of concentration and temperature[J]. IEEE Trans on Electron Devices, 1982, 29(2):292-295. 被引量:1

共引文献12

投稿分析

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部 意见反馈