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1.3μm InAs/GaAs量子点侧向耦合浅刻蚀分布反馈激光器 预览

1.3μm InAs/GaAs quantum dot laterally coupled distributed feedback laser with shallow-etched gratings
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摘要 为了简化工艺流程和减轻制备难度,提出了1.3μm分布反馈(distributed feedback,DFB)激光器的新型制作方法.该方法采用纯折射率侧向耦合(laterally coupled,LC)结构,将一阶光栅浅刻蚀在脊形波导两侧,避免了激光器材料的二次外延和光栅深刻蚀.采用非掺杂和p掺杂两种InAs/GaAs量子点(quantum dot,QD)样品来制备LC-DFB激光器.与采用传统方法制备的DFB激光器相比,非掺杂量子点LC-DFB激光器表现出了低的阈值电流,其值为1.12mA/量子点层;p掺杂量子点LC-DFB激光器表现出了较大的特征温度和斜率效率.在室温下,这种浅刻蚀的LC-DFB激光器实现了单纵模连续输出,边模抑制比(side mode suppression ratio,SMSR)高达51dB.同时,在不同的测试温度和注入电流下,这种激光器表现出了优良的波长稳定性.1.3μm浅刻蚀量子点LC-DFB激光器有望在远距离光纤通信领域实现巨大应用价值. An improved way of fabricating 1.3μm distributed feedback(DFB)laser is presented to avoid overgrowth and deep etching.This structure has laterally index-coupling first-order gratings fabricated by shallow etching alongside the ridge waveguide.It is named laterally coupled DFB(LC-DFB)laser,whose properties is better than that of traditional DFB lasers.Two InAs/GaAs quantum dot(QD)samples,undoped QD and p-doped QD are prepared for DFB lasers.A low threshold current of 1.12 mA per QD layer is achieved by the undoped QD LC-DFB lasers.A high characteristic temperature and differential quantum efficiency is obtained by p-doped QD LC-DFB lasers.The index-coupled LCDFB laser achieves single longitudinal mode continuous-wave operation with a large side mode suppression ratio(SMSR)of 51 dB.The laser also shows good wavelength stability against drive current and working temperature.The 1.3μm InAs/GaAs QDs LC-DFB laser with regrowth-free shallow-etched gratings promises great potential applications in long-distance fibre-optics communication.
作者 李齐柱 伏霞 张子旸 王旭 陈红梅 侯春彩 黄源清 郭春扬 闵嘉华 LI Qizhu;FU Xia;ZHANG Ziyang;WANG Xu;CHEN Hongmei;HOU Chuncai;HUANG Yuanqing;GUO Chunyang;MIN Jiahua(School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China;Patent Examination Cooperation Jiangsu Center of the Patent Office,National Intellectual Property Administration,Suzhou 215163,Jiangsu,China;Key Lab of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,Jiangsu,China)
出处 《上海大学学报:自然科学版》 CAS CSCD 北大核心 2019年第4期472-483,共12页 Journal of Shanghai University(Natural Science Edition)
基金 国家自然科学基金资助项目(61575215) 科技部重点研究与发展计划资助项目(2016YFB0402303)
关键词 分布反馈激光器 侧向耦合 浅刻蚀光栅 边模抑制比 distributed feedback(DFB)laser laterally coupled(LC) shallow-etched grating side mode suppression ratio(SMSR)
作者简介 通信作者:闵嘉华(1961-),男,教授,博士生导师,博士,研究方向为半导体材料与器件等.E-mail:minjh@shu.edu.cn
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