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Supersaturating Silicon with Titanium by Continuous-Wave Laser Irradiation of Sputtered Titanium Film on Silicon
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作者 范宝殿 邱羽 +4 位作者 陈蓉 潘淼 郑将辉 陈朝 《中国物理快报:英文版》 SCIE CAS CSCD 2016年第2期67-70,共4页
A method of magnetron sputtering followed by continuous-wave(cw) laser irradiation is developed to prepare crystalline silicon supersaturated with titanium.The irradiation of single crystalline Si samples sputtered wi... A method of magnetron sputtering followed by continuous-wave(cw) laser irradiation is developed to prepare crystalline silicon supersaturated with titanium.The irradiation of single crystalline Si samples sputtered with a thin layer of Ti is carried out under the 1064 nm cw laser in a specially designed home-made facility.The thickness of the Si layer,within which the concentration of Ti surpasses the Mott limit,reaches 365 nm and the maximum concentration of Ti reaches 1.83 × 10~(21) cm~(-3).The crystalline structure of the Si samples is kept unchanged after cw laser irradiation.These results show that the current method can be an efficient way to obtain an intermediate band semiconductor material for solar cells. 展开更多
关键词 激光溅射 晶体硅 连续波 过饱和 钛膜 连续激光辐照 单晶Si 设备国产化
Electronic structure and luminescence properties of Tb3+-activated NaBaBO3 green-emitting phosphor
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作者 郑将辉 程其进 +3 位作者 吴顺情 陈蓉 陈朝 《中国稀土学报:英文版》 SCIE EI CAS CSCD 2015年第9期933-938,共6页
A novel green-emitting phosphor Tb3+ doped Na Ba BO3 was prepared using a conventional high temperature solid-state reaction method. The crystal structure and luminescence properties of Na Ba BO3:Tb3+ were studied. Th... A novel green-emitting phosphor Tb3+ doped Na Ba BO3 was prepared using a conventional high temperature solid-state reaction method. The crystal structure and luminescence properties of Na Ba BO3:Tb3+ were studied. The Na Ba BO3 host was also investigated using density functional theory calculations. Our calculated lattice parameters of Na Ba BO3 host were found to be in excellent agreement with experiment. Theoretically, the host matrix Na Ba BO3 was a wide-gap semiconductor with a direct band gap of 3.66 e V, where the bottom of conduction band and the top of valence band were dominated by Ba 5d state and O 2p state, respectively. The excitation spectra indicated that the phosphor could be effectively excited by near ultraviolet light. The phosphor featured a satisfactory green performance with the highest photoluminescence intensity located at 543 nm excited by 377 nm light and the measured Commission Internationale de L’Eclairage(CIE) chromaticity was determined to be(0.2860, 0.4640). The optimum Tb3+ concentration in Na Ba BO3 was 5.0 mol.%. The concentration quenching occurred when Tb3+ concentration was beyond 5.0 mol.% and the concentration quenching mechanism could be explained by the dipole-dipole interaction. The effects of charge compensators(including Li+, Na+ and K+) and temperature on the photoluminescence of Na Ba BO3:Tb3+ were also studied. The present work suggested that the Na Ba BO3:Tb3+ phosphor was a promising green-emitting material for near ultraviolet white light-emitting diodes. 展开更多
关键词 绿色荧光粉 发光性能 电子结构 偶极-偶极相互作用 高温固相反应法 白光发光二极管 激活 密度泛函理论
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