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电力系统中光学互感器的研究与评述 预览 被引量:29
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作者 肖智宏 《电力系统保护与控制》 CSCD 北大核心 2014年第12期148-154,共7页
高可靠性和测量精确性是电力系统光学互感器实用化的前提和基础。应用电力传感光学理论,从结构模型出发,对磁光玻璃型和全光纤型光学电流互感器、电光晶体型和全光纤型光学电压互感器的实现方案进行了分类和技术比较,指出了各种方案... 高可靠性和测量精确性是电力系统光学互感器实用化的前提和基础。应用电力传感光学理论,从结构模型出发,对磁光玻璃型和全光纤型光学电流互感器、电光晶体型和全光纤型光学电压互感器的实现方案进行了分类和技术比较,指出了各种方案在检测算法和制造工艺的优缺点。最后,对光学传感技术实用化需要关注的问题和研究方向进行了探讨。 展开更多
关键词 电力系统 光学电流互感器 光学电压互感器 法拉第效应 普克尔效应 逆压电效应
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Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts
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作者 吕元杰 林兆军 +5 位作者 张宇 孟令国 曹芝芳 栾崇彪 陈弘 王占国 《中国物理:英文版》 SCIE EI CAS CSCD 2011年第9期 350-354,共5页
Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated.Some samples were thermally treated in a furnace with N 2 ambience at 600 C for different times (0.5 h,4.5 h,10.5 h,18 h,33 h,48 h,and 72 h),the other... Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated.Some samples were thermally treated in a furnace with N 2 ambience at 600 C for different times (0.5 h,4.5 h,10.5 h,18 h,33 h,48 h,and 72 h),the others were thermally treated for 0.5 h at different temperatures (500℃,600℃,700℃,and 800℃).With the measured current-voltage (I-V) and capacitance-voltage (C-V) curves and by self-consistently solving Schrodinger’s and Poisson’s equations,we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer.The relative permittivity was in proportion to the strain of the AlGaN barrier layer.The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600℃ in the current study),and then the relative permittivity was almost a constant with the increased thermal stress time.When the sample was treated at 800℃ for 0.5 h,the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms.Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect,the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices. 展开更多
关键词 相对介电常数 异质结器件 肖特基接触 热应力 屏障 逆压电效应 时间常数 泊松方程
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