Resonant tunnelling diodes(RTDs) have negative differential resistance effect,and the current-voltage characteristics change as a function of external stress,which is regarded as meso-piezoresistance effect of RTDs.In...Resonant tunnelling diodes(RTDs) have negative differential resistance effect,and the current-voltage characteristics change as a function of external stress,which is regarded as meso-piezoresistance effect of RTDs.In this paper,a novel micro-accelerometer based on AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure,and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer.According to the experimental results,the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes.The largest sensitivity of this RTD based micro-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer,while the smallest one is 1.49135 mV/g.展开更多
基金Project supported in part by the National Natural Science Foundation of China (Grant No 50775209), the Fork Ying Tung Education Foundation (Grant No 101052) and Program for Excellent Talents by Ministry of Education of China.
文摘Resonant tunnelling diodes(RTDs) have negative differential resistance effect,and the current-voltage characteristics change as a function of external stress,which is regarded as meso-piezoresistance effect of RTDs.In this paper,a novel micro-accelerometer based on AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure,and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer.According to the experimental results,the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes.The largest sensitivity of this RTD based micro-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer,while the smallest one is 1.49135 mV/g.