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Relation between etching profile and voltage-current shape of sintered SiC etching by atmospheric pressure plasma
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作者 D C SEOK S R YOO +2 位作者 K I LEE Y S CHOI Y H JUNG 《等离子体科学与技术:英文版》 SCIE EI CAS CSCD 2019年第4期137-144,共8页
Sintered silicon carbide(SiC)was etched by a dielectric barrier discharge source.A high voltage bipolar pulse was used with helium gas for the plasma generation.One stable filament plasma was generated and could be us... Sintered silicon carbide(SiC)was etched by a dielectric barrier discharge source.A high voltage bipolar pulse was used with helium gas for the plasma generation.One stable filament plasma was generated and could be used for SiC etching.As the processing gas(NF3)mixing rate increased,the width and depth of the etching profile became narrower and deeper.The differentiated V-Q Lissajous method was used for measuring the capacitances(Ceq)of the electrode after the plasma turned on.The width of the etching profile was proportional to Ceq.As the current peak value/smx of the substrate current in creased,the volume removal rate of SiC increased.The etch depth was proportional to the ratio of/smx to Ceq.Additionally,because of the different characteristics of the plasma disks on SiC substrate by the voltage polarity,the etching profile was unstable.However,in high NF3 mixing process,the etching profile became stable and deeper. 展开更多
关键词 dielectric BARRIER DISCHARGE silicon CARBIDE plasma etchingfilament discharge surface CHARGE
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